MOSFETs

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MOSFET FQP27P06

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.

 

Features:

  • -27A, -60V, RDS(on) = 0.07Ω @VGS = -10 V
  • Low gate charge ( typical 33 nC)
  • Low Crss ( typical 120 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability
  • 175°C maximum junction temperature rating
₹110.00
MOSFET IRF530N

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

 

Features:

 

  • Advanced Process Technology
  • Ultra Low On-Resistance
  • Dynamic dv/dt Rating
  • 175°C Operating Temperature
  • Fast Switching
  • Fully Avalanche Rated
₹22.00
MOSFET IRF540N

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

 

Features:

 

  • Advanced Process Technology
  • Ultra Low On-Resistance
  • Dynamic dv/dt Rating
  • 175°C Operating Temperature
  • Fast Switching
  • Fully Avalanche Rated
₹18.00
MOSFET IRF3205
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Features:

• Advanced Process Technology
• Ultra Low On-Resistance
• Dynamic dv/dt Rating
• 175°C Operating Temperature
• Fast Switching
• Fully Avalanche Rated
₹20.00
MOSFET IRF4905

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

 

Features:

 

  • Advanced Process Technology
  • Ultra Low On-Resistance
  • Dynamic dv/dt Rating
  • 175°C Operating Temperature
  • Fast Switching
  • P-Channel
  • Fully Avalanche Rated
₹45.00
MOSFET IRF9630

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.

 

Features:

 

  • Dynamic dV/dt rating
  • Repetitive avalanche rated
  • P-channel
  • Fast switching
  • Ease of paralleling
  • Simple drive requirements
₹24.00
MOSFET IRFZ44N

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

 

Features:

 

  • Advanced Process Technology
  • Ultra Low On-Resistance
  • Dynamic dv/dt Rating
  • 175°C Operating Temperature
  • Fast Switching
  • Fully Avalanche Rated
₹15.00
MOSFET KA7808

The KA78XX/KA78XXA series of three-terminal positive regulator are available in the TO-220/D-PAK package and with several fixed output voltages, making them useful in a wide range of applications. Each type employs internal current limiting, thermal shut down and safe operating area protection, making it essentially indestructible. If adequate heat sinking is provided, they can deliver over 1A output current. Although designed primarily as fixed voltage regulators, these devices can be used with external components to obtain adjustable voltages and currents.

 

Features

  • Output Current up to 1A
  • Output Voltages of 5, 6, 8, 9, 10, 12, 15, 18, 24V
  • Thermal Overload Protection
  • Short Circuit Protection
  • Output Transistor Safe Operating Area Protection
₹70.00
MOSFET P12N10

These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

 

Features:

 

  • 12A, 80V and 100V
  • rDS(ON) = 0.200Ω
₹65.00
MOSFET RFP12P10

The RFP12P10 is a P-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

 

Features

  • 12A, 80V and 100V
  • rDS(ON) = 0.300Ω
  • SOA is Power Dissipation Limited
  • Nanosecond Switching Speeds
  • Linear Transfer Characteristics
  • High Input Impedance
  • Majority Carrier Device
₹22.00
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