BJT_NPN

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Transistor NPN 2N3055

2N3055 NPN Power Transistor

Features:

  • Collector-Emitter Volt (Vceo): 60V
  • Collector-Base Volt (Vcbo): 100V
  • Collector Current (Ic): 15.0A
  • hfe: 25-70 @ 4000mA
  • Power Dissipation (Ptot): 115W
  • Current-Gain-Bandwidth (ftotal): 2.5MHz
  • Type: NPN

 

₹49.00
Transistor NPN BC548

One of the most commonly used transistor - the BC548. Use it to drive buzzers, small motors, circuit boards, LED arrays, etc. from an Arduino/microcontroller or TTL signal. 

BC548 offers lower noise compared to BC549 and BC550 transistors. It can be used as a general purpose switching and amplification transistor. BC548 comes in a TO-92, SOT54 plastic package.

Features

  • Low current (max. 100 mA)
  • Low voltage (max. 65 V).


BC547 Absolute Maximum Ratings:

  • VCBO (Collector-Base Voltage) = 50V
  • VCEO (Collector-Emitter Voltage) = 45 V
  • VEBO (Emitter-Base Voltage) = 6V
  • IC (Collector Current) DC = 100 mA
  • PC (Collector Power Dissipation) = 500 mW
  • TJ (Junction Temperature) = 150 °C
  • TSTG (Storage Temperature) = -65 ~ 150 °C


Applications:

  • General purpose switching and amplification.

 

₹2.00
Transistor NPN BD139
The epitaxial planar transistor BD139 is mounted in the SOT-32 plastic package. These are designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits.

Features:
• Pre-selected in DC current gain

Application:
• General purpose
₹16.00
Transistor NPN 2N2222A (TO-92)

2N2222A NPN Switching Transistor (PNP complement: 2N2907A) 

Feature 

  • High current (max. 800 mA)
  • Low voltage (max. 40 V).

Application

  • Linear amplification and switching.

Specification

  • Transistor Polarity: NPN
  • Collector Emitter Voltage V(br)ceo: 30V
  • Power Dissipation Pd: 500mW
  • DC Collector Current: 800mA
  • DC Current Gain hFE: 100
  • Transistor Case Style: TO-18
  • of Pins: 3
  • Collector Emitter Voltage Vces: 400mV
  • Continuous Collector Current Ic Max: 800mA
  • Current Ic @ Vce Sat: 150mA
  • Current Ic Continuous a Max: 800mA
  • Current Ic hFE: 150mA
  • Full Power Rating Temperature: 25°C
  • Gain Bandwidth ft Min: 250MHz
  • Gain Bandwidth ft Typ: 250MHz
  • Hfe Min: 100
  • of Transistors: 1
  • Pin Configuration: a
  • Power Dissipation Pd: 500mW
  • Power Dissipation Ptot Max: 500mW
  • Termination Type: Through Hole
  • Voltage Vcbo: 60V
₹5.00
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