Power Transistors

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Power Transistor C1061

This NPN silicon power transistor is designed for use in low frequency power amplifier applications.

 

Features:

 

  • Type - n-p-n
  • Collector-Emitter Voltage: 50 V
  • Collector-Base Voltage: 50 V
  • Emitter-Base Voltage: 4 V
  • Collector Current: 3 A
  • Collector Dissipation - 25 W
  • DC Current Gain (hfe) - 35 to 320
  • Transition Frequency - 5 MHz
  • Operating and Storage Junction Temperature Range -55 to +150 °C
  • Package - TO-220
₹9.00
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